| PART |
Description |
Maker |
| LT1182CSPBF |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 1.25 A FLUORESCENT LIGHT CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO16
|
Linear Technology, Corp.
|
| HCS27DMSR FN3054 HCS27MS HCS27D HCS27HMSR HCS27K H |
FF-ST4 Basic Series, Type 4 Safety Light Curtains With Automatic Restart HC/UH SERIES, TRIPLE 3-INPUT NOR GATE, CDIP14
Radiation Hardened Triple 3-Input NOR Gate
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
| LNA2702L 0878 LN59 LN59L LN59-LNA2702L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
From old datasheet system
GaAs Bi-directional Infrared Light Emitting Diodes
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| TLN210 TLN210F |
INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Corporation
Toshiba Semiconductor
|
| NCP5890 NCP5890MUTXG |
Light Management IC Dedicated for LCD Backlighting and Multi-LED Fun Light Applications
|
ON Semiconductor
|
| FL3000-A |
MICRO-LITE? 150W HALOGEN LIGHT SOURCE WITH 36 ANNULAR FIBER OPTIC LIGHT GUIDE (2.35 ID) - 565 ID BORE
|
List of Unclassifed Man...
|
| SC668EVB |
8 LED Light Management Unit Automatic Dropout Prevention , Ambient Light Sense Input, PWM Dimming, and 4 LDOs
|
Semtech Corporation
|
| ACTS630D ACTS630HMSR ACTS630K ACTS630MS 5962F96721 |
Radiation Hardened Octal Three-State Transparent Latch
Dual J-K Negative-Edge-Triggered Flip-Flop With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened EDAC (Error Detection and Correction) ACT SERIES, 16-BIT ERROR DETECT AND CORRECT CKT, UUC28
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
